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# robots.txt for http://www.daniel-schaadt.de/ User-agent: * |
Title | Research group - Prof. Dr. Daniel M. |
Description | Research Group - Prof. Dr. Daniel M. |
Keywords | research group, energy conversion, molecular beam epitaxy, semiconductors, nanostructures |
WebSite | daniel-schaadt.de |
Host IP | 77.22.237.118 |
Location | Germany |
Site | Rank |
sergiodaniels.ch | 0 |
Euro€500
Zuletzt aktualisiert: 2022-06-06 05:25:05
daniel-schaadt.de hat Semrush globalen Rang von 0. daniel-schaadt.de hat einen geschätzten Wert von € 500, basierend auf seinen geschätzten Werbeeinnahmen. daniel-schaadt.de empfängt jeden Tag ungefähr 500 einzelne Besucher. Sein Webserver befindet sich in Germany mit der IP-Adresse 77.22.237.118. Laut SiteAdvisor ist daniel-schaadt.de sicher zu besuchen. |
Kauf-/Verkaufswert | Euro€500 |
Tägliche Werbeeinnahmen | Euro€500 |
Monatlicher Anzeigenumsatz | Euro€500 |
Jährliche Werbeeinnahmen | Euro€500 |
Tägliche eindeutige Besucher | 500 |
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Host | Type | TTL | Data |
daniel-schaadt.de. | A | 60 | IP: 77.22.237.118 |
daniel-schaadt.de. | NS | 150 | NS Record: shades17.rzone.de. |
daniel-schaadt.de. | NS | 150 | NS Record: docks09.rzone.de. |
daniel-schaadt.de. | MX | 150 | MX Record: 5 smtpin.rzone.de. |
Research group - Prof. Dr. Daniel M. Schaadt Research group Prof. Dr. D. M. Schaadt Institute of Energy Research and Physical Technologies Clausthal University of Technology The research group "energy conversion" under the leadership of Prof. Dr. Daniel M. Schaadt is part of the Institute of Energy Research and Phyiscal Technologies (IEPT) at the Clausthal Technical University (TUC). The group operates labs at the IEPT in Clausthal. The group has very close contacts to national and international partners. The research group works on materials and devices which are of interest for application in photovoltaics, photoelectroysis, sensing and spintronics. The research efforts cover the whole range of identifying new materials, their preparation and characterization, as well as development of new measurement techniques and simulation and preparation of devices. Focus is put on hybrid structures made of nanoscale materials of or combined with III-V compound semiconductor heterostructures, |
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